Browsing by Subject "Carrier dynamics"
Now showing items 1-20 of 22
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Carrier dynamics and conductivity of SnO 2 nanowires investigated by time-resolved terahertz spectroscopy
(2012)THz spectroscopy has been applied to investigate the photo-induced and intrinsic conductivity in SnO 2 nanowires using the Drude-Smith model. The refractive index of the nanowires was found to decrease from 2.4 to 2.1 with ...
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Article
Carrier dynamics and conductivity of SnO 2 nanowires investigated by time-resolved terahertz spectroscopy
(2012)THz spectroscopy has been applied to investigate the photo-induced and intrinsic conductivity in SnO 2 nanowires using the Drude-Smith model. The refractive index of the nanowires was found to decrease from 2.4 to 2.1 with ...
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Article
Carrier dynamics in InS nanowires grown via chemical vapor deposition
(2010)Transient femtosecond absorption spectroscopy and timecorrelating single photon counting (TCSPC) photoluminescence (PL) were employed to study InS nanowires (NWs) grown by chemical vapor deposition (CVD) and determine the ...
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Article
Carrier dynamics in InS nanowires grown via chemical vapor deposition
(2010)Transient femtosecond absorption spectroscopy and timecorrelating single photon counting (TCSPC) photoluminescence (PL) were employed to study InS nanowires (NWs) grown by chemical vapor deposition (CVD) and determine the ...
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Article
Carrier dynamics in Β-Ga2O3 nanowires
(2010)Carrier dynamics have been investigated in Β-Ga2O 3 nanowires (NWs) grown by the vapor-liquid-solid mechanism, using ultrashort transient absorption spectroscopy in conjunction with time-correlating single photon counting ...
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Article
Carrier relaxation dynamics in SnxNy nanowires grown by chemical vapor deposition
(2009)Carrier relaxation dynamics in tin nitride (SnxNy) nanowires have been investigated using femtosecond transient absorption spectroscopy. The nanowires were grown directly on quartz using chemical vapor deposition and had ...
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Article
Carrier relaxation dynamics in SnxNy nanowires grown by chemical vapor deposition
(2009)Carrier relaxation dynamics in tin nitride (SnxNy) nanowires have been investigated using femtosecond transient absorption spectroscopy. The nanowires were grown directly on quartz using chemical vapor deposition and had ...
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Article
Femtosecond carrier dynamics in implanted and highly annealed polycrystalline silicon
(2006)We have studied the ultrafast optical response of highly implanted and highly annealed polycrystalline silicon films using 400 nm ultrashort amplified pulses with fluence ranging between 8 mJ cm-2 to 56 mJ cm -2. Transient ...
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Article
Femtosecond carrier dynamics in In 2O 3 nanocrystals
(2009)We have studied carrier dynamics in In 2O 3 nanocrystals grown on a quartz substrate using chemical vapor deposition. Transient differential absorption measurements have been employed to investigate the relaxation dynamics ...
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Article
Femtosecond carrier dynamics in In 2O 3 nanocrystals
(2009)We have studied carrier dynamics in In 2O 3 nanocrystals grown on a quartz substrate using chemical vapor deposition. Transient differential absorption measurements have been employed to investigate the relaxation dynamics ...
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Article
Influence of surface-related states on the carrier dynamics in (Ga,In)N/GaN single quantum wells
(2009)We report on the influence of surface-related states on the relaxation of carriers within single (Ga,In)N/GaN quantum wells. Two identical samples that differ only in the thickness of the top GaN cap layer were studied. ...
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Probing carrier dynamics in implanted and annealed polycrystalline silicon thin films using white light
(2006)Polycrystalline silicon thin film samples implanted and annealed at various temperatures have been studied using ultrafast laser pulse excitation. Nondegenerate pump-probe technique has been utilized to investigate carrier ...
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Article
Surface-related states in oxidized silicon nanocrystals enhance carrier relaxation and inhibit auger recombination
(2008)We have studied ultrafast carrier dynamics in oxidized silicon nanocrystals (NCs) and the role that surface-related states play in the various relaxation mechanisms over a broad range of photon excitation energy corresponding ...
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Article
Tin oxide nanowires: The influence of trap states on ultrafast carrier relaxation
(2009)We have studied the optical properties and carrier dynamics in SnO 2 nanowires (NWs) with an average radius of 50 nm that were grown via the vapor-liquid solid method. Transient differential absorption measurements have ...
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Article
Tin oxide nanowires: The influence of trap states on ultrafast carrier relaxation
(2009)We have studied the optical properties and carrier dynamics in SnO 2 nanowires (NWs) with an average radius of 50 nm that were grown via the vapor-liquid solid method. Transient differential absorption measurements have ...
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Article
Ultrafast carrier relaxation in inn nanowires grown by reactive vapor transport
(2009)We have studied femtosecond carrier dynamics in InN nanowires grown by reactive vapor transport. Transient differential absorption measurements have been employed to investigate the relaxation dynamics of photogenerated ...
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Article
Ultrafast carrier relaxation in inn nanowires grown by reactive vapor transport
(2009)We have studied femtosecond carrier dynamics in InN nanowires grown by reactive vapor transport. Transient differential absorption measurements have been employed to investigate the relaxation dynamics of photogenerated ...
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Article
Ultrafast hole carrier relaxation dynamics in p-type CuO nanowires
(2011)Ultrafast hole carrier relaxation dynamics in CuO nanowires have been investigated using transient absorption spectroscopy. Following femtosecond pulse excitation in a non-collinear pump-probe configuration, a combination ...
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Article
Ultrafast hole carrier relaxation dynamics in p-type CuO nanowires
(2011)Ultrafast hole carrier relaxation dynamics in CuO nanowires have been investigated using transient absorption spectroscopy. Following femtosecond pulse excitation in a non-collinear pump-probe configuration, a combination ...
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Article
Ultrafast Spectroscopy and Red Emission from beta-Ga2O3/beta-Ga2S3 Nanowires
(2015)Ultrafast pump-probe and transient photoluminescence spectroscopy were used to investigate carrier dynamics in beta-Ga2O3 nanowires converted to beta-Ga2O3/Ga2S3 under H2S between 400 to 600 degrees C. The beta-Ga2O3 ...